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M7R76FAJ SBP1050 C574P MC933 A1101 LTF2012D A1267 00211
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  Datasheet File OCR Text:
 BB669/BB689...
Silicon Tuning Diode For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure

1
BB669 BB689 BB689-02V
2
Type BB669 BB689 BB689-02V
Package SOD323 SCD80 SC79
Configuration single single Single
LS(nH) 1.8 0.6 0.6
Marking 1 EE E
Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature (R 5k ) IF Top Tstg 20 -55 ... 150 -55 ... 150 mA C Symbol VR VRM Value 30 35 Unit V
1
Mar-27-2003
BB669/BB689...
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C IR 10 200 nA typ. max.
Unit
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter AC Characteristics Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT
Symbol min.
Values typ. max.
Unit
pF 51 39.6 2.6 2.5 56.5 43.4 2.8 2.7 20.9 15.5 0.85 61.5 47.2 3 2.9 23.2 17 2 %
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1 /CT28 CT2 /CT25 CT/CT
18 14.5 -
-
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz VR = 1 V, VR = 28 V, f = 1 MHz
VR = 8 V, f = 470 MHz
1For
details please refer to Application Note 047
2
Mar-27-2003
Series resistance
Capacitance matching1)
rS
BB669/BB689...
Diode capacitance CT =
f = 1MHz
60
pF
(VR )
Temperature coefficient of the diode
10 -3
50 45
1/C
CT
40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24
V
TC C
10 -4
30
10 -5 0 10
VR
T A = Parameter
10
pA
3
10
2
IR
10
1
10
0
10
-1
10
0
Reverse current I R =
(V R)
85C
25C
10
1
V
10
2
VR
3
capacitance TCc =
(VR )
10
1
V
10
2
VR
Mar-27-2003


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